Invention Description
High-voltage power electronic devices require materials and designs that can handle large electric fields while maintaining low power loss and high efficiency. Traditional diode structures often face trade-offs between breakdown voltage, leakage current, and on-resistance, limiting their performance in demanding applications. As power systems continue to scale, there is a need for devices that can achieve higher breakdown voltages without sacrificing efficiency or increasing energy loss. This highlights the demand for advanced semiconductor designs that improve electric field management and overall device reliability.
Researchers at Arizona State University have developed a vertical gallium oxide (β-Ga₂O₃) trench junction barrier Schottky diode (JBSD) incorporating p-type nickel oxide (NiO) and a space-modulated junction termination extension (SM-JTE). Using a novel bi-layer hard mask process, NiO is deposited along trench sidewalls to improve electric field distribution within the device. This design enables significantly higher reverse breakdown voltages (~2 kV) and lower turn-on voltages (~1 V) compared to conventional planar diodes. The trench SM-JTE structure reduces leakage current and conduction losses while maintaining low on-resistance. Together, these improvements offer enhanced performance for next-generation high-voltage power electronics.
This novel gallium oxide trench junction barrier Schottky diode design uses p-type nickel oxide with space modulated junction termination extension to achieve high breakdown voltage and low turn-on voltage for advanced power device applications.
Potential Applications
- High-voltage, low-loss power electronics
- Power switches and rectifiers for electric vehicles and renewable energy systems
- Next-generation, energy-efficient power conversion systems
- High-efficiency power supplies and inverters requiring ultrahigh voltage blocking capability
- Advanced semiconductor components for smart grid and energy infrastructure
- Military and aerospace electronics demanding robust, high-power semiconductor devices
Benefits and Advantages
- High reverse breakdown voltage exceeding 1.8 kV with peak values near 2 kV
- Low turn-on voltage around 1 V, reduced from ~2.5 V in planar devices
- Reduced conduction losses due to lower effective on-resistance
- Improved electric field management with trench space modulated junction termination extension
- Fabrication method using novel bi-layer Ni/SiO2 hard mask enabling precise NiO deposition on trench sidewalls
- High BFOM indicating excellent device efficiency
- Compatibility with scalable, cost-effective fabrication processes using halide vapor phase epitaxy (HVPE) grown β-Ga2O3
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