Case ID: M25-092P^

Published: 2025-09-23 14:44:49

Last Updated: 1758638689


Inventor(s)

Saivineeth Penukula
Nicholas Rolston

Technology categories

Advanced Materials/NanotechnologyApplied TechnologiesEnergy & PowerPhysical ScienceSemiconductor DevicesSemiconductors, Materials & Processes

Licensing Contacts

Physical Sciences Team

Measuring Ion Concentration as a Stability Metric in Perovskite Semiconductors

Perovskite materials, especially hybrid metal halide perovskite (MHP), have garnered significant attention because of their potential in the field of solar cells. However, the further development of perovskite materials has been plagued by their stability challenges. Because of the “soft” ionic nature of the lattice while being brittle and unable to plastically deform, 3D MHP materials are highly susceptible to light, heat, moisture, oxygen, delamination, and electric field. More importantly, because of the relatively weak binding energy between the cations and anions in the lattice, ion migration remains one of the primary degradation pathways.
 
Researchers at Arizona State University have developed a novel method utilizing mobile ion concentration (N₀) as a metric to determine the stability, longevity, and thermal durability of perovskite solar cells by mitigating ion migration through engineered electrode barriers. The method provides a universal operational threshold linked to N₀ concentration, enabling improved reliability and manufacturing quality control for perovskite-based electronic devices. This extends well beyond photovoltaic devices to any solid-state material that contains mobile ions.
 
Potential Applications
  • Next Generation Solar Panels
  • Ionic-Based Devices
  • Renewable Energy
  • Quality Control & Screening tools of ionic and semiconductor devices
Benefits and Advantages
  • Effective – Reproducible across architectures and can be applied to wide range of materials such as batteries and memristors.
  • Scalable – Suitable for large-scale manufacturing
  • Predictability – Universal predictive metric (N₀) for device failure, enabling better reliability assessment
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