Case ID: M10-149P^

Published: 2020-02-26 11:12:19

Last Updated: 1670403701


Inventor(s)

John Kouvetakis

Technology categories

Physical ScienceSemiconductor DevicesSemiconductors, Materials & Processes

Licensing Contacts

Shen Yan
Director of Intellectual Property - PS
[email protected]

Synthesis of Amorphous Si3N4-xPx Dielectrics

Alternatives to silicon dioxide and silicon nitride, the
traditional dielectric and passivation materials in semiconductor devices, have
been the subject of intense research for the past two decades. Alloy compounds
whose properties can be tuned via compositional adjustments are of particular
interest. These include materials such as silicon oxynitride.

Researchers at Arizona State University have developed a
technology that uses compositional tuning to produce a family of amorphous
dielectrics with near stoichiometric Si3N4-xPx (x~ 0-1) compositions and
adjustable optical response. Precise control of the reactant fluxes produces
alloys in which the PSi3 molecular core of the precursor is likely incorporated
intact into the covalent nitride network. The incorporation of P systematically
decreases the band gap while increasing the refractive index.

Potential Applications


  • Silicon based lasers
  • Silicon Photonics
  • Optical Devices
  • Semiconductor Applications
  • Silicon based wave guides

Benefits and Advantages


  • Incorporation of P into SiNP lowers the band gap
  • Increased refractive index
  • Greater ability to tune the dielectric properties of
    these materials than for silicon oxynitrides