β-Ga₂O₃ in the Construction of NiO/β-Ga₂O₃ p-n Diodes

Background

Silicon (Si) is the most widely used semiconductor for many reasons including its abundance, cost-effectiveness, and excellent electrical properties. However, its lower breakdown voltage and thermal limitations make it less suitable for high-power, high- frequency and high-temperature applications. The uniformity in silicon's crystal and electronic structures makes its properties relatively isotropic, limiting the ability to tailor its electronic characteristics through crystal orientation alone.

β-Ga₂O₃ (beta-Gallium Oxide) is another semiconductor material that has unique properties such as high breakdown voltage making it a promising material for next-generation electronic devices. There is a need for the use of β-Ga₂O₃’s anisotropic properties in NiO (Nickel Oxide)/B-Ga203 p-n diodes to allow for the creation of diodes with specific, tailored electronic characteristics.

Invention Description

Researchers at Arizona State University have developed a novel method to harness the anisotropic behavior of β-Ga₂O₃ in the construction of NiO/β-Ga₂O₃ p-n diodes, enabling the creation of high-voltage diodes with customizable electronic characteristics by leveraging different crystal orientations while preserving surface properties. This system possesses the ability to tailor electronic properties through crystal orientation and allows for the design of high-voltage p-n diodes with specific attributes, enhancing performance and efficiency. Despite customizing electronic properties, this system preserves surface properties, ensuring reliability and longevity of the diodes.

Potential Applications:

Semiconductor manufacturing
Power electronics
Telecommunications

Benefits and Advantages:

Higher voltage handling: superior breakdown voltage
Customizable electronic properties: tailoring through crystal orientation
Enhanced thermal stability: better performance at high temperatures

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