Multi-Layer Thin Film Composite Thermal Interface Materials with In Situ Alloying of Liquid and Solid Metal Inner Components

Semiconductors, Materials & Processes

Multi-Layer Thin Film Composite Thermal Interface Materials with In Situ Alloying of Liquid and Solid Metal Inner Components

GaN-Based Threshold Switching Device and Memory Diode

Steep-Slope AlGaN/GaN Transistors with Threshold Switching Device

Hydrogen Production Using Alkali-Metal-Doped BiVO4 for Near-Perfect Suppression of Bulk Recombination by Photo-Electrochemical Water Oxidation

Colorimetric Sensors for Multiplexed Detection

FPGAs with Reconfigurable Threshold Logic Gates for Improved Performance, Power, and Area

Low-Leakage Regrown GaN P-N Junctions for GaN Power Devices

Physical Unclonable Functions with Silicon-Rich SiOx Dielectric Devices

Plasma-Based Edge Terminations for GaN Power Devices

Regrown p-GaN by Metalorganic Chemical Vapor Deposition (MOCVD) for GaN Vertical-Channel Junction Field-Effect Transistors (VCJFETs)

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