Semiconductors, Materials & Processes
Steep-Slope AlGaN/GaN Transistors with Threshold Switching Device
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Hydrogen Production Using Alkali-Metal-Doped BiVO4 for Near-Perfect Suppression of Bulk Recombination by Photo-Electrochemical Water Oxidation
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Colorimetric Sensors for Multiplexed Detection
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Low-Leakage Regrown GaN P-N Junctions for GaN Power Devices
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Physical Unclonable Functions with Silicon-Rich SiOx Dielectric Devices
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Plasma-Based Edge Terminations for GaN Power Devices
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Regrown p-GaN by Metalorganic Chemical Vapor Deposition (MOCVD) for GaN Vertical-Channel Junction Field-Effect Transistors (VCJFETs)
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Polymeric Mac-Imprint Stamp Materials for High-Density Defect-Free Patterning of Semiconductors
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Smart Interposer Technology for Electrically Reconfigurable Operation
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Highly Efficient Chiral Plasmonic Metasurfaces for Mid-Infrared Polarization Filtering and Detection
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