Invention Description
Analog in-memory computing (AIMC) is a computing architecture created to enable energy efficient computing beyond the current state of the art, especially when applied to neural network algorithms. Modern, state of the art graphics processing units (GPUs) and systolic array-based accelerators known as tensor processing units (TPUs) can process deep neural network inference with 8-bit weights and activations at an efficiency of approximately 1-8 tera operations per second per watt (TOPS/W) as of 2025. AIMC systems are predicted to be capable of well over 10 TOPS/W. However, AIMC has not yet been commercially successful. The most significant challenge of AIMC to date has been to achieve a neural network accuracy using an analog processor that is equivalent or close to that possible with a digital system. The accuracy of the system depends on several factors, often the most significant being the resistive memory element itself as well as the peripheral circuitry.
Prof. Matthew Marinella at Arizona State University and a collaborator at Sandia National Laboratories have developed a CMOS-compatible memory-cell design that improves resistive-memory accuracy for analog neural network computing. This design represents a significant improvement in the error profile of the dot product calculations, resulting in greater neural network inference accuracy. Further, this design increases effective conductance of the memory cell, reducing the total current on each column, which reduces the effect of parasitics and nonlinearity. These improvements in accuracy moves AIMC based on resistive memories much closer to commercial viability.
This novel memory-cell design improves the accuracy of resistive-memory-based AI accelerators by converting device conductance into a more favorable, state-dependent output.
Potential Applications
- AI and neural-network inference accelerators for data centers
- Energy-efficient edge AI and embedded computing hardware
- CMOS-integrated analog in-memory computing systems based on resistive memory arrays
- Computing platforms using ReRAM, phase-change memory, or conductive-bridge RAM
Benefits and Advantages
- Improves neural-network inference accuracy by reducing error at low conductance states
- Expands the effective dynamic range of resistive-memory cells
- Reduces column currents, helping limit parasitic voltage drops and support larger arrays
- Can lower the maximum current required by readout circuitry, potentially improving accuracy and reducing power
- Compatible with CMOS-based analog in-memory computing architectures using ReRAM, PCM, or CBRAM